The HTOL test is conducted under the conditions of TJ = 125°C temperature, maximum VDD, and
either dynamic or static operation. The FIT calculations in Table 41 through Table
43 are based on the assumption of 0.7 eV activation energy and 60% confidence
level.
Summary
Table 1. Summary of HTOL Test Results
Device |
Lot Quantity |
Fail Quantity |
Device Quantity |
Actual Device Hours at TJ ≥
125°C |
Equivalent Device Hours at TJ
= 125°C |
Failure Rate at 60% CL and TJ =
55°C (FIT) |
XC2Cxxx/A |
12 |
0 |
539 |
1078000 |
1082919 |
11 |
XC95xxxXL |
13 |
0 |
542 |
1044000 |
1137973 |
10 |
XCRxxxXL |
12 |
0 |
538 |
1008500 |
1010470 |
12 |
Data
Table 2. HTOL Test Results for 180 nm Si Gate CMOS Device Type XC2Cxxx/A
Device |
Lot Quantity |
Fail Quantity |
Device Quantity |
Actual Device Hours at TJ ≥
125°C |
Equivalent Device Hours at TJ
= 125°C |
Failure Rate at 60% CL and TJ =
55°C (FIT) |
XC2C128 |
10 |
0
|
449 |
898,000 |
902,919 |
11 |
XC2C64A |
2 |
0
|
90 |
180,000 |
180,000 |
XC2Cxxx/A |
12 |
0
|
539 |
1,078,000 |
1,082,919 |
Table 3. HTOL Test Results for 350 nm/250 nm Si Gate CMOS Device Type XC95xxxXL
Device |
Lot Quantity |
Fail Quantity |
Device Quantity |
Actual Device Hours at TJ ≥
125°C |
Equivalent Device Hours at TJ
= 125°C |
Failure Rate at 60% CL and TJ =
55°C (FIT) |
XC95144XL |
2 |
0
|
87 |
174,000 |
305,777 |
10 |
XC9572XL |
11 |
0
|
455 |
870,000 |
832,195 |
XC95xxxXL |
13 |
0
|
542 |
1,044,000 |
1,137,973 |
Table 4. HTOL Test Results for 350 nm Si Gate CMOS Device Type XCRxxxXL
Device |
Lot Quantity |
Fail Quantity |
Device Quantity |
Actual Device Hours at TJ ≥
125°C |
Equivalent Device Hours at TJ
= 125°C |
Failure Rate at 60% CL and TJ =
55°C (FIT) |
XCR3064XL |
1 |
0
|
45 |
22,500 |
22,738 |
12 |
XCR3128XL |
3 |
0
|
135 |
270,000 |
270,630 |
XCR3256XL |
4 |
0
|
176 |
352,000 |
352,744 |
XCR3384XL |
3 |
0
|
134 |
268,000 |
268,358 |
XCR3512XL |
1 |
0
|
48 |
96,000 |
96,000 |
XCRxxxXL |
12 |
0
|
538 |
1,008,500 |
1,010,470 |